One-dimensional Quantum Wire Formed at the Boundary Between Two Insulating LaAlO3/SrTiO3 Interfaces
A. Ron, Y. Dagan

TL;DR
This paper reports the creation of a one-dimensional quantum wire at the boundary between two insulating LaAlO3/SrTiO3 interfaces, demonstrating quantized conductance steps indicative of a 1D channel with unique spin properties.
Contribution
It introduces a novel method to form a 1D quantum wire at the boundary of insulating oxide interfaces and observes quantized conductance with half-integer steps.
Findings
Observation of quantized conductance steps at low temperatures
Evidence for absence of spin degeneracy in the 1D channel
Demonstration of a boundary conducting channel between insulating regions
Abstract
We grow a tiled structure of insulating two dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a function of gate voltage indicative of a one dimensional channel. The step size of half the quantum of conductance is an evidence for absence of spin degeneracy.
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices · Magnetic and transport properties of perovskites and related materials
