Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$
Conn O'Rourke, David R. Bowler

TL;DR
This study uses DFT calculations to explore how aluminium doping and oxygen vacancies interact in TiO$_2$, revealing mechanisms that improve dye-sensitized solar cell efficiency by stabilizing defect states and facilitating charge compensation.
Contribution
It provides detailed insights into the defect chemistry of Al-doped TiO$_2$ and demonstrates how oxygen vacancy diffusion enhances solar cell performance.
Findings
Al doping introduces valence band holes and interacts with oxygen vacancies.
Coupled defects are energetically favorable and maintain charge neutrality.
Dye adsorption behavior is unaffected by clustered defects, improving stability.
Abstract
Density functional theory (DFT) and DFT corrected for on-site Coulomb interactions (DFT+U) calculations are presented on Aluminium doping in bulk TiO and the anatase (101) surface. Particular attention is paid to the mobility of oxygen vacancies throughout the doped TiO lattice, as a means by which charge compensation of trivalent dopants can occur. The effect that Al doping of TiO electrodes has in dye sensitised solar cells is explained as a result of this mobility and charge compensation. Substitutional defects in which one Al3+ replaces one Ti4+ are found to introduce valence band holes, while intrinsic oxygen vacancies are found to introduce states in the band-gap. Coupling two of these substitutional defects with an oxygen vacancy results in exothermic defect formation which maintain charge neutrality. Nudged elastic band calculations have been performed to investigate…
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Taxonomy
TopicsTiO2 Photocatalysis and Solar Cells · Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides
