Theory of Band Warping and its Effects on Thermoelectronic Transport Properties
Nicholas A. Mecholsky, Lorenzo Resca, Ian L. Pegg, Marco Fornari

TL;DR
This paper develops a comprehensive theory of band warping in electronic band structures, enabling accurate analysis of its effects on transport and thermoelectric properties, especially in complex materials like silicon.
Contribution
It introduces a radial expansion-based theory and defines angular effective mass, distinguishing band warping from non-parabolicity and anisotropy, with practical evaluation procedures.
Findings
Analyzed valence band warping in silicon using first-principles calculations.
Derived tensorial transport coefficients for warped and quadratically expandable bands.
Identified transport-equivalent ellipsoidal bands at critical points.
Abstract
Optical and transport properties of materials depend heavily upon features of electronic band structures in proximity to energy extrema in the Brillouin zone (BZ). Such features are generally described in terms of multi-dimensional quadratic expansions and corresponding definitions of effective masses. Multi-dimensional expansions, however, are permissible only under strict conditions that are typically violated by degenerate bands and even some non-degenerate bands. Suggestive terms such as "band warping" or "corrugated energy surfaces" have been used to refer to such situations and ad hoc methods have been developed to treat them. While numerical calculations may reflect such features, a complete theory of band warping has not been developed. We develop a generally applicable theory, based on radial expansions, and a corresponding definition of angular effective mass. Our theory also…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Advanced Thermoelectric Materials and Devices · Transition Metal Oxide Nanomaterials
