The Short-term Memory (D.C. Response) of the Memristor Demonstrates the Causes of the Memristor Frequency Effect

TL;DR

This paper explains the memristor frequency effect by linking its short-term d.c. response decay to the hysteresis size variation with frequency, supported by mathematical reasoning and experimental validation.

Contribution

It reveals the material causes of the memristor frequency effect through a mathematical model of its d.c. response and experimental data analysis.

Findings

Decaying d.c. response explains frequency effect

Mathematical model links response decay to hysteresis size

Experimental data from two memristor types supports theory

Abstract

A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.