Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments
Serhiy Senyukov, Jerome Baudot, Auguste Besson, Giles Claus, Loic, Cousin, Wojciech Dulinski, Mathieu Goffe, Boris Hippolyte, Robert Maria,, Levente Molnar, Xitzel Sanchez Castro, Marc Winter

TL;DR
CMOS pixel sensors offer a promising, cost-effective technology for high-energy physics detectors, combining small pixel size, low material budget, and potential for high radiation hardness and fast readout, driven by advances in commercial CMOS processes.
Contribution
This paper reviews recent developments in CMOS pixel sensors, highlighting their advantages and potential for future high-energy physics tracking and vertexing applications.
Findings
CMOS sensors enable small pixels and low material budget.
Advances in CMOS processes improve radiation hardness and readout speed.
Applications include upgrades for LHC and FAIR experiments.
Abstract
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch () and low material budget () per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS…
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Taxonomy
TopicsParticle Detector Development and Performance · Radiation Detection and Scintillator Technologies · Particle physics theoretical and experimental studies
