Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

TL;DR

This paper reports the successful growth and electrical analysis of a heterojunction between 2D p-MoS2 and nitrogen-doped 4H-SiC, demonstrating rectification and diode behavior, enabling new heterostructure applications.

Contribution

It introduces a novel method for directly growing crystalline p-MoS2 on SiC and characterizes its electrical properties as a heterojunction.

Findings

Heterojunction exhibits rectification and diode-like I-V characteristics.

Capacitance-voltage measurements determine the built-in voltage.

Crystalline MoS2 films successfully grown on SiC using chemical vapor deposition.

Abstract

The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were found to be crystalline based on x-ray diffraction measurements. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a p-n junction diode. Capacitance voltage measurements were used to determine the built-in voltage for the p-MoS2/n-SiC heterojunction p-n diode. The demonstration of heterogeneous material integration between 2D layered semiconductors and 3D SiC enables a new class of heterostructures.