Transport evidence of robust topological surface state in BiTeCl single crystals, the first strong inversion asymmetric topological insulator
F.X. Xiang, X.L. Wang, and S.X. Dou

TL;DR
This paper provides the first transport evidence of a robust topological surface state in the inversion asymmetric topological insulator BiTeCl, revealing key quantum properties and potential for novel topological phenomena and applications.
Contribution
It reports the first transport measurements confirming the topological surface state in BiTeCl, a novel strong inversion asymmetric topological insulator, via SdH oscillations and Landau quantization.
Findings
Observation of 2D Fermi surface via SdH oscillations
Detection of pi Berry phase indicating topological surface state
High mobility and small effective mass of surface carriers
Abstract
Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one of the polar semiconductors, has been discovered by angle-resolved photoemission spectroscopy to be the first strong inversion asymmetric topological insulator (SIATI). In contrast to the previously discovered 3D TIs with inversion symmetry, the SIATI are expected to exhibit novel topological phenomena, including crystalline-surface-dependent topological surface states, intrinsic topological p-n junctions, and pyroelectric and topological magneto-electric effects3. Here, we report the first transport evidence for the robust topological surface state in the SIATI BiTeCl via observation of Shubnikov-de Haas (SdH) oscillations, which exhibit the 2D nature…
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Taxonomy
TopicsTopological Materials and Phenomena · Advanced Condensed Matter Physics · Graphene research and applications
