Black phosphorus field-effect transistors

TL;DR

This paper reports the successful fabrication and characterization of black phosphorus field-effect transistors, demonstrating high current modulation, good saturation, and thickness-dependent mobility, highlighting its potential for future nano-electronic applications.

Contribution

It presents the first detailed fabrication and electrical characterization of black phosphorus FETs with few-layer crystals, revealing key performance metrics and material properties.

Findings

Drain current modulation of 10^5 in thin samples

High mobility up to ~1000 cm²/Vs at 10 nm thickness

Well-developed current saturation in IV characteristics

Abstract

Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is a tremendous challenge, and at the same time potentially rewarding. In this work, we succeed in fabricating field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometers. Drain current modulation on the order of 10E5 is achieved in samples thinner than 7.5 nm at room temperature, with well-developed current saturation in the IV characteristics, both are important for reliable transistor performance of the device. Sample mobility is also found to be thickness dependent, with the highest value up to ~ 1000 cm2/Vs obtained at thickness ~ 10 nm. Our results demonstrate the potential of black phosphorus thin crystal as a new two-dimensional material for future applications in nano-electronic devices.