Dielectric relaxation and electrical conductivity in lead-free (100-x)(Li0.12Na0.88)NbO3-xBaTiO3 (0 to x to 40) piezoelectric ceramics: An impedance spectroscopic study

TL;DR

This study investigates dielectric relaxation and electrical conductivity in lead-free (Li,Na)NbO3-BaTiO3 ceramics using impedance spectroscopy, revealing the roles of oxygen vacancies and grain boundary conduction across temperature ranges.

Contribution

It provides new insights into the dielectric and conduction mechanisms in lead-free piezoelectric ceramics, emphasizing the impact of oxygen vacancies and relaxation processes.

Findings

LFDD observed at high temperatures below and above Tm

Oxygen vacancies influence hopping conduction and relaxation

Grain boundary conduction dominates at high temperatures

Abstract

Dielectric behavior and conductivity mechanism in lead-free (100-x)(Li0.12Na0.88)NbO3-xBaTiO3 (0 to x to 40) piezoelectric ceramics were investigated using impedance spectroscopy over a wide temperature (-100 oC to500 oC) and frequency range (0.1 Hz to1 MHz). The grain and grain boundary response as well as the relaxation processes at different frequencies and temperatures were also discussed. A low frequency dispersion in dielectric permittivity (LFDD), a typical characteristic of high-temperature behavior was observed both below and above the ferro-paraelectric phase transition temperature, Tm. Oxygen-defect-related complexes generated due to acceptor type doping were found to play an important role in LFDD and hopping conduction. The dielectric relaxation follows Jonscher universal law, however LFDD is found to be associated with quasi-DC process (QCD). The activation energies of DC conduction confirm the mechanism as the thermal motion (short range hopping) of doubly ionized oxygen vacancies. At high temperature, the conductivity relaxation mechanism is dominated by grain boundary conduction through hopping electron created by the charge compensating oxygen vacancies.