Fabrication of Electronic Fabry-Perot Interferometer in the Quantum Hall Regime

TL;DR

This paper presents a novel fabrication method for electronic Fabry-Perot interferometers in the quantum Hall regime, combining e-beam lithography and dry-etching to optimize device performance and control interference trajectories.

Contribution

The authors introduce a fabrication process that minimizes impurities and allows precise tuning of quantum point contacts and interference paths in quantum Hall interferometers.

Findings

Optimized etching process achieves desired resistance levels.

Metallized gates inside etched areas enable finer control.

Method reduces charged trap excitation and impurity deposition.

Abstract

A fabrication method for electronic quantum Hall Fabry-Perot interferometers (FPI) is presented. Our method uses a combination of e-beam lithography and low-damage dry-etching to produce the FPIs and minimize the excitation of charged traps or deposition of impurities near the device. Optimization of the quantum point contacts (QPC) is achieved via systematically varying the etch depth and monitoring the device resistance between segmented etching sessions. The etching is stopped when a desired value of resistance is obtained. Finer control of interference trajectories is obtained by the gate metallized inside the etched area by e-beam evaporation. Our approach allows for a control of the delicate potential bending near the quantum well by tuning the confining potential of the quantum point contacts.