Improved Performance of Tunneling FET Based on Hetero Graphene Nanoribbons

TL;DR

This paper proposes a heterojunction tunneling FET using armchair graphene nanoribbons, demonstrating improved performance metrics such as higher on current and steeper subthreshold swings through ballistic quantum transport simulations.

Contribution

It introduces a hetero-structure Tunneling FET based on armchair graphene nanoribbons with enhanced performance over homostructures, highlighting the impact of doping density.

Findings

Higher on current and lower off current in hetero-structure

Performance depends significantly on source/drain doping density

High doping density can degrade device performance

Abstract

A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low band gap nanoribbons as the source/drain material, the hetero- structure shows better performance including higher on current, lower off current, and improved steep subthreshold swings compared with homostructure. It is also found the device performance greatly depends on the source/drain dopping density. High doping density leads to fewer density states in the source and degrades the device performance.