Noise Studies of Driven Geometric Phase Gates with Trapped Ions

TL;DR

This paper analyzes the performance of geometric phase gates in trapped ions using stimulated Raman transitions, demonstrating error thresholds and the need for intense lasers to minimize photon scattering errors.

Contribution

It provides a detailed noise analysis of geometric phase gates in trapped ions with stimulated Raman transitions, highlighting conditions for fault-tolerance.

Findings

Gate errors can be below fault-tolerance thresholds with laser intensity fluctuations.

Reducing photon scattering errors requires very intense laser beams for large detunings.

High laser intensity is necessary to maintain gate speed while minimizing errors.

Abstract

We present a study of the performance of the trapped-ion driven geometric phase gates introduced in [New J. Phys. 15, 083001 (2013)] when realized in a stimulated Raman transition. We show that the gate can achieve errors below the fault-tolerance threshold in the presence of laser intensity fluctuations. We also find that, in order to reduce the errors due to photon scattering below the fault-tolerance threshold, very intense laser beams are required to allow for large detunings in the Raman configuration without compromising the gate speed.