Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

TL;DR

This paper evaluates irradiated n-on-p edgeless planar pixel sensors with active trench technology for ATLAS upgrades, focusing on their electrical performance and potential for high-luminosity LHC conditions.

Contribution

It introduces novel edgeless planar pixel sensors with active trench technology and provides comprehensive electrical characterization after irradiation.

Findings

Sensors maintain functionality after irradiation

Active trench reduces dead area effectively

Promising for high-luminosity LHC upgrades

Abstract

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.