Low frequency noise in chemical vapor deposited MoS2

TL;DR

This study investigates low frequency noise in high mobility CVD-grown MoS2, revealing superior material uniformity and lower noise levels compared to graphene, with implications for nanoscale electronic device performance.

Contribution

It provides the first detailed analysis of low frequency noise in CVD-grown MoS2, demonstrating its low noise characteristics and correlation with mobility, indicating high material quality.

Findings

Hooge's parameter ranges from 1.44E-3 to 3.51E-2

CVD MoS2 exhibits lower noise than graphene

Hooge's parameter inversely correlates with mobility

Abstract

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS2 devices than reported single-layer MoS2 FET. The extracted Hooge's parameter is one order of magnitude lower than CVD grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.