Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry adapted $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian
O. Marquardt, E. P. O'Reilly, S. Schulz

TL;DR
This paper develops a (111)-oriented eight-band k·p Hamiltonian to accurately and efficiently analyze the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction, including strain and piezoelectric effects.
Contribution
The work introduces a symmetry-adapted (111)-oriented Hamiltonian and evaluates its effectiveness for modeling quantum dot electronic properties, reducing computational costs compared to traditional (001)-oriented models.
Findings
The (111)-oriented Hamiltonian accurately describes quantum dot electronic structure.
Second-order piezoelectric effects significantly influence polarization potential.
Reduced computational costs compared to conventional models.
Abstract
In this work, we present and evaluate a (111)-rotated eight-band Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation of single-band effective mass and eight-band models, to investigate the capabilities of these models for the description of electronic properties of (111)-grown zinc-blende quantum dots. Moreover, the influence of second-order piezoelectric contributions on the…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
