Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

TL;DR

This paper demonstrates the creation of spin filtering regions in InGaAs using focused ion beam implantation, achieving high spin-dependent recombination ratios and enhancing spin polarization with magnetic fields.

Contribution

It introduces a method to fabricate spin filters in InGaAs via ion implantation and systematically optimizes conditions for maximum spin-dependent recombination efficiency.

Findings

Achieved SDR ratios up to 240% in implanted regions.

Optimized implantation parameters over four orders of magnitude.

External magnetic field enhances SDR through nuclear spin polarization.

Abstract

We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizeable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects.