Silicene and Germanene as prospective playgrounds for Room Temperature Superconductivity
G. Baskaran

TL;DR
This paper proposes that silicene and germanene are Mott insulators capable of high-temperature superconductivity upon doping, supported by experimental evidence and theoretical modeling, potentially reaching room temperature superconductivity.
Contribution
It introduces a novel Mott insulator model for silicene and germanene, suggesting they can host doping-induced high Tc superconductivity, supported by recent experimental findings.
Findings
Evidence of band narrowing in silicene supports Mott localization.
Superconducting gap observed below 35 K with high ratio of 2Δ/kBTc.
Room temperature superconductivity potential in silicene and germanene.
Abstract
Combining theory and certain striking phenomenology we suggest that silicene and germanene are \textit{elemental Mott insulators} and abode of doping induced high Tc superconductivity. In our theory, a 3 fold reduction in silicene band width, in comparison to graphene, and short range coulomb interactions enable Mott localization. Recent experimental results are invoked to provide support for our Mott insulator model: i) a significant -band narrowing, in silicene on ZrB seen in ARPES, ii) a superconducting gap appearing below 35 K with a large 20 in silicene on Ag, iii) emergence of electron like pockets at M points, on electron doping by Na adsorbent, iv) certain coherent quantum oscillation like features exhibited by silicene transistor at room temperatures and v) absence of Landau level splitting upto 7 Tesla and vi) superstructures,…
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Taxonomy
TopicsGraphene research and applications · Topological Materials and Phenomena · Quantum and electron transport phenomena
