Strain-induced magnetism in MoS2 monolayer with defects

TL;DR

This study demonstrates that applying strain to MoS2 monolayers with defects induces magnetism and band gap closure, suggesting potential for novel memory and logic devices using earth-abundant materials.

Contribution

It reveals strain-induced magnetism in defective MoS2 monolayers through density functional calculations, highlighting a new way to engineer magnetic properties in nonmagnetic materials.

Findings

Magnetic moment of at least 2μB per vacancy defect.

Strain causes band gap closure and magnetism emergence.

Feasibility of experimental testing of the predicted magnetism.

Abstract

The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2muB per vacancy defect. The straininduced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2.