Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition

TL;DR

This paper demonstrates the heteroepitaxial growth of group IV-VI nitrides on sapphire using atomic layer deposition, achieving high-quality films at lower temperatures with improved electrical properties.

Contribution

It introduces a novel low-temperature ALD process for heteroepitaxial nitrides on sapphire, enhancing film quality and electrical performance.

Findings

Epitaxial films exhibit reduced resistivity.

Films show increased residual resistance ratio (RRR).

Successful heteroepitaxial growth at lower temperatures.

Abstract

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.