Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains

TL;DR

This paper demonstrates that monolayer graphene FETs operating in the negative differential resistance region can achieve high voltage gains over 10, despite some trade-offs in frequency performance, through quantum transport simulations.

Contribution

It introduces a novel approach to utilize negative differential resistance in graphene FETs for enhanced RF voltage gain, supported by self-consistent quantum transport analysis.

Findings

Voltage gain >10 in negative differential resistance region

Gain improvement at the expense of reduced oscillation frequency

Requires careful circuit stabilization

Abstract

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We show that, compared to the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5--3 and the need for a careful circuit stabilization.