Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

TL;DR

This study evaluates the radiation tolerance of ATLAS HEC readout electronics through irradiation tests, assesses performance degradation under HL-LHC conditions, and explores alternative technologies like IHP 250 nm Si CMOS for potential replacements.

Contribution

It provides the first comprehensive irradiation testing of the ATLAS HEC readout electronics and compares current and alternative technologies for improved radiation hardness.

Findings

Current PSB devices show performance degradation under HL-LHC radiation levels.

IHP 250 nm Si CMOS technology exhibits good radiation tolerance and meets specifications.

Performance parameters like gain and input impedance were evaluated as functions of fluence.

Abstract

The readout electronics of the ATLAS Hadronic Endcap Calorimeter (HEC) will have to withstand an about 3-5 times larger radiation environment at the future high-luminosity LHC (HLLHC) compared to their design values. The preamplifier and summing boards (PSBs), which are equipped with GaAs ASICs and comprise the heart of the readout electronics, were irradiated with neutrons and protons with fluences surpassing several times ten years of operation of the HL-LHC. Neutron tests were performed at the NPI in Rez, Czech Republic, where a 36 MeV proton beam was directed on a thick heavy water target to produce neutrons. The proton irradiation was done with 200 MeV protons at the PROSCAN area of the Proton Irradiation Facility at the PSI in Villigen, Switzerland. In-situ measurements of S-parameters in both tests allow the evaluation of frequency dependent performance parameters, like gain and input impedance, as a function of fluence. The linearity of the ASIC response was measured directly in the neutron tests with a triangular input pulse of varying amplitude. The results obtained allow an estimation of the expected performance degradation of the HEC. For a possible replacement of the PSB chips, alternative technologies were investigated and exposed to similar neutron radiation levels. In particular, IHP 250 nm Si CMOS technology has turned out to show good performance and match the specifications required. The performance measurements of the current PSB devices, the expected performance degradations under HL-LHC conditions, and results from alternative technologies will be presented.