A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

TL;DR

This paper demonstrates a novel organic superconducting field-effect transistor where substrate-induced strain modulates the organic lattice, enabling control over superconductivity and opening new avenues for advanced computing and fundamental studies.

Contribution

It introduces a strain-tunable organic superconducting FET, linking lattice strain control with superconductivity, which was not previously achieved in organic devices.

Findings

Strain from the substrate can induce superconductivity in organic FETs.

The device operates as a three-terminal Josephson junction.

Strain tuning enables access to superconducting states at low temperatures.

Abstract

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.