Influence of multi-electronic states on few-quantum-dot nanolasers
J. Liu, S. Ates, M. Lorke, J. M{\o}rk, P. Lodahl, S. Stobbe

TL;DR
This study investigates the gain mechanisms in quantum-dot nanolasers, revealing that multi-electronic states, rather than just excitons, significantly contribute to lasing, supported by experimental data and theoretical modeling.
Contribution
It provides experimental evidence and a theoretical model showing multi-electronic states dominate gain in quantum-dot nanolasers, extending understanding beyond exciton contributions.
Findings
Four excitons are coupled at low power
Lasing transition occurs at low threshold with broad emission background
Gain is primarily from multi-electronic states, not just excitons
Abstract
We present an experimental and theoretical study on the gain mechanism in a photonic-crystal-cavity nanolaser with embedded quantum dots. From time-resolved measurements at low excitation power we find that four excitons are coupled to the cavity. At high excitation power we observe a smooth low-threshold transition from spontaneous emission to lasing. Before lasing emission sets in, however, the excitons are observed to saturate, and the gain required for lasing originates rather from multi-electronic transitions, which give rise to a broad emission background. We compare the experiment to a model of quantum-dot microcavity lasers and find that the number of emitters feeding the cavity must greatly exceed four, which confirms that the gain is provided by multi-electronic states. Our results are consistent with theoretical predictions.
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Taxonomy
TopicsPhotonic Crystals and Applications · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
