Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

TL;DR

This paper reports the observation of single photon emission from precisely fabricated InGaN/GaN quantum dots, demonstrating high-temperature operation and uniform optical properties, advancing quantum dot technology for quantum information applications.

Contribution

It introduces a method for creating site-controlled InGaN/GaN quantum dots with high yield and uniform optical properties, enabling single photon emission at elevated temperatures.

Findings

Single photon emission verified up to 90 K.

High yield (>90%) of optically active quantum dots.

Linearly polarized emission with nanosecond lifetimes.

Abstract

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.