Voltage Controlled Switching Phenomenon in Disordered Superconductors

TL;DR

This paper presents a theoretical framework for electric field-induced superconductor-insulator transition (ESIT) and proposes a universal device architecture leveraging this phenomenon for practical superconducting switches.

Contribution

It introduces a theoretical demonstration of ESIT and a general device design, exploring universal behaviors like size, disorder, and temperature effects.

Findings

Demonstrates the theoretical occurrence of ESIT in disordered superconductors.

Proposes a universal switching device architecture based on ESIT.

Analyzes the effects of sample size, disorder, and temperature on switching behavior.

Abstract

Superconductor-to-Insulator transition (SIT) is a phenomenon occurring for highly disordered superconductors and is suitable for a superconducting switch development. SIT has been demonstrated to be induced by different external parameters such as temperature, magnetic field, electric field, etc. However, electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds the promise of any practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of ESIT. We also propose a general switching device architecture using ESIT and study some of its universal behavior, such as the effect of sample size, disorder strength and temperature on the switching action. This work provides a general framework for development of such a device.