Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities

TL;DR

This paper introduces a novel electrically-detected ESR technique for silicon nanostructures that identifies point defects via magnetoresistance response, eliminating the need for external ESR equipment and utilizing internal GHz Josephson emission.

Contribution

The study presents the first implementation of EDESR in silicon quantum wells with microcavities, enabling defect detection through internal GHz emission without external ESR apparatus.

Findings

Successful identification of point defects in Si-QWs

Demonstration of ESR detection via magnetoresistance response

Utilization of internal GHz Josephson emission for ESR

Abstract

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.