Elastic Strains in SiGe Heterostructure With Non-Uniform Quantum Dots
V.V. Kuryliuk

TL;DR
This study uses finite element simulations to analyze how non-uniform germanium distribution affects elastic strain in SiGe heterostructures with quantum dots, revealing that uniform composition results in higher strain.
Contribution
It introduces a detailed finite element modeling approach to examine the impact of compositional non-uniformity on elastic strains in SiGe quantum dots.
Findings
Uniform quantum dots are more strained than non-uniform ones.
Non-uniform germanium distribution reduces elastic strain.
Strain distribution depends on compositional uniformity.
Abstract
Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the magnitude of elastic fields was studied. It is shown that quantum dots with a uniform component content are more strained in comparison with non-uniform nanoislands
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Silicon Nanostructures and Photoluminescence
