Chemically gated electronic structure of a superconducting doped topological insulator system

TL;DR

This study uses angle-resolved photoemission spectroscopy to investigate how surface chemical gating affects the electronic structure and superconducting properties of Cu-doped Bi2Se3, a topological insulator with potential Majorana Fermion applications.

Contribution

It provides new insights into how chemical surface gating influences the electronic structure and superconductivity in doped topological insulators, relevant for Majorana Fermion research.

Findings

Surface chemical gating modifies electronic structure.

Carrier density and electric field are affected by copper deposition.

Implications for topological superconductor properties.

Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.