Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance

TL;DR

This paper proposes a novel Schottky collector bipolar transistor design that eliminates impurity doping by inducing charge carriers with metal electrodes, resulting in improved high-frequency performance.

Contribution

It introduces a doping-free charge plasma bipolar transistor with Schottky collector using metal work function electrodes, evaluated through 2D device simulation.

Findings

High current gain achieved

Enhanced cut-off frequency demonstrated

Doping-free design simplifies fabrication

Abstract

In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n emitter and the p base regions, respectively. Using two-dimensional device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma based bipolar transistor with Schottky collector exhibits a high current gain and a better cut-off frequency compared to its conventional counterpart.