Low Frequency Electronic Noise in Single-Layer MoS2 Transistors

TL;DR

This study investigates low frequency 1/f noise in single-layer MoS2 transistors, revealing how environmental factors and temperature affect charge transport and noise characteristics.

Contribution

It provides a quantitative analysis of 1/f noise in MoS2 transistors, highlighting the impact of atmospheric adsorbates and temperature on noise and mobility.

Findings

1/f noise explained by mobility fluctuations with specific Hooge parameters

Ambient conditions significantly increase noise amplitude and decrease mobility

Temperature reduction increases generation-recombination noise by an order of magnitude

Abstract

Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K.