Singlet Excited States of Anions with Higher Main Group Elements
Ryan C. Fortenberry

TL;DR
This study uses high-level coupled cluster theory to explore the excited state properties of anions containing silicon and other higher main group elements, revealing the existence of bound and valence excited states in several such systems.
Contribution
It is the first comprehensive computational investigation demonstrating valence singlet excited states in small, closed-shell anions with higher main group elements beyond silicon.
Findings
Nine anions possess bound excited states.
Two anions have clear valence excited states.
Valence singlet excited states are shown only in group 14 anions.
Abstract
Previous studies have shown that dipole-bound excited states exist for certain small anions. However, valence excited states have been reported for some closed-shell anions, but those with singlet valence excited states have, thus far, contained a single silicon atom. This work utilizes high-level coupled cluster theory previously shown to reproduce excited state energies to better than 0.1 eV compared with experiment in order to examine the electronic excited state properties of anions containing silicon and other higher main group atoms as well as their first row analogues. Of the fourteen anions involved in this study, nine possess bound excited states of some kind: CHSN, CH, CCSiH, CCSH, CCNH, CCPH, BHPH, AlHNH, and AlHPH. Two possess clear valence states: CCSiH and its first row analogue CH. Substantial…
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