Coulomb interaction and valley-orbit coupling in Si quantum dots
Luyao Jiang, C. H. Yang, Zhaodi Pan, Alessandro Rossi, Andrew S., Dzurak, and Dimitrie Culcer

TL;DR
This study investigates how electron-electron interactions influence valley-orbit coupling in silicon quantum dots with 2 to 4 electrons, finding that such effects are negligible due to interference and cancellation mechanisms, confirmed by experimental spectra.
Contribution
The paper demonstrates that electron-electron interactions do not significantly affect valley-orbit coupling in multivalley Si quantum dots, contrary to prior expectations.
Findings
Electron-electron interactions are negligible in valley-orbit coupling for N=2 to 4.
Valley interference and spinor overlaps suppress interaction effects.
Experimental spectra confirm occupation-independent valley-orbit coupling.
Abstract
The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N = 4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.
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