Heat Capacity of Single Crystal CuxTiSe2 Superconductors
J. Kacmarcik, Z. Pribulova, V. Paluchova, P. Szabo, P. Husanikova, G., Karapetrov, and P. Samuely

TL;DR
This study measures the heat capacity of Cu$_x$TiSe$_2$ single crystals across various doping levels, revealing a consistent single s-wave superconducting gap with intermediate coupling strength, regardless of charge density wave suppression.
Contribution
It provides the first comprehensive heat capacity analysis of Cu$_x$TiSe$_2$ across different doping levels, demonstrating a universal superconducting gap structure.
Findings
Single s-wave gap observed across all doping levels.
Superconducting gap ratio 2Δ/kBTc = 3.7, indicating intermediate coupling.
Charge density wave order does not affect the superconducting gap structure.
Abstract
We present heat capacity measurements on a series of superconducting CuTiSe single crystals with different Cu content down to 600 mK and up to 1 T performed by ac microcalorimetry. The samples cover a large portion of the phase diagram from an underdoped to a slightly overdoped region with an increasing superconducting critical temperature and the charge density wave (CDW) order gradually suppressed. The electronic heat capacity as a function of normalized temperature shows no difference regardless of the concentration of copper, i.e., regardless of how much the CDW order is developed in the samples. The data analysis reveals consistently a single s-wave gap with an intermediate coupling strength = 3.7 for all samples.
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