High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (533) silicide structure on Cu(001)

TL;DR

This study combines STM, LEED, and XAS techniques to analyze the atomic structure of silicon on Cu(001), revealing an ordered superstructure and detailed atomic arrangements at low coverage.

Contribution

It provides new insights into the atomic structure and local arrangements of silicon silicide on Cu(001) using combined advanced characterization methods.

Findings

Formation of an ordered quasi-commensurate superstructure at low coverage

Quantitative Si-Cu distance measurement from XAS data

Detailed atomic arrangement of the (533) silicide structure

Abstract

Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM) and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (~ 0.5 ML) and after annealing at 100{\deg}C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the structure.