First Principles Investigations of the Atomic, Electronic, and Thermoelectric Properties of Equilibrium and Strained Bi2Se3 & Bi2Te3, with van der Waals Interactions

TL;DR

This study uses density functional theory to investigate the atomic, electronic, and thermoelectric properties of Bi2Se3 and Bi2Te3, emphasizing van der Waals interactions and strain effects, with implications for thermoelectric performance.

Contribution

It provides improved atomic structures and insights into strain effects on electronic and thermoelectric properties of Bi2Se3 and Bi2Te3 using advanced DFT methods.

Findings

Van der Waals DFT accurately reproduces experimental interlayer distances.

Atomic structures based on Nakajima align better with experimental data.

Strain influences band gap and thermoelectric properties significantly.

Abstract

Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric properties of strained bulk and thin film Bi2Se3 and Bi2Te3, focusing on an appropriate description of van der Waals interactions. The calculations show that the van der Waals Density functional with Cooper's exchange can reproduce closely the experimental interlayer distances in unstrained Bi2Se3 and Bi2Te3. Interestingly, we predict atomic structures that are in much better agreement with the experimentally determined structure from Nakajima than that obtained from Wyckoff, especially for Bi2Se3 where the difference in atomic structures qualitatively changes the electronic band structure. The band structure obtained using the Nakajima structure, and the theoretically optimized structure, are in much better agreement with previous reports of photoemission measurements, than that obtained using the Wyckoff structure. Fully optimizing atomic structures of bulk and thin film Bi2Se3 and Bi2Te3 under different in-plane and uniaxial strains, we predict that the electronic band gap of both the bulk materials and thin films decreases with tensile in-plane strain and increases with compressive in-plane strain. We also predict, using the semiclassical Boltzmann approach, that the magnitude of the n-type Seebeck coefficient of Bi2Te3 can be increased by the compressive in-plane strain, while that of Bi2Se3 can be increased with tensile in-plane strain. Further, the in-plane power factor of n-doped Bi2Se3 can be increased with compressive uniaxial strain, while that of n-doped Bi2Te3 can be increased by compressive in-plane strain. ...