Organometallic Hexahapto Functionalization of Single Layer Graphene as a Route to High Mobility Graphene Devices

TL;DR

This paper demonstrates that organometallic hexahapto chromium complexation of graphene can produce high-mobility electronic devices with improved on-off ratios, offering a reversible and distinct mode of electronic structure modification.

Contribution

It introduces a novel reversible hexahapto functionalization method for graphene that preserves high mobility while enhancing device performance.

Findings

High mobility graphene devices achieved with chromium complexation

Reversible hexahapto bonding preserves electronic properties

Enhanced on-off ratios in graphene field effect transistors

Abstract

Organometallic hexahapto chromium metal complexation of single layer graphene, which involves constructive rehybridization of the graphene pi-system with the vacant chromium d orbital, leads to field effect devices which retain a high degree of the mobility with enhanced on-off ratio. This hexahapto mode of bonding between metal and graphene is quite distinct from the modification in electronic structure induced by conventional covalent sigma-bond formation with creation of sp3 carbon centers in graphene lattice and this chemistry is reversible.