Correct nonlinearity and hysteresis of volt-ampere characteristics of spin valves, magnetic tunnel junctions and memristors

TL;DR

This paper addresses the physical inconsistencies in the hysteresis of resistance in spin valves, magnetic tunnel junctions, and memristors, proposing a corrected understanding aligned with energy conservation principles.

Contribution

It introduces a physically consistent model of hysteresis in resistance, correcting discrepancies in existing publications for spintronic and memristive devices.

Findings

Proposes a schematic model of resistance hysteresis consistent with energy conservation.

Identifies and corrects misconceptions in previous hysteresis models.

Provides a framework for more accurate design of memory devices.

Abstract

There are essential achievements in synthesis of interesting for creation of compact electronic memory switched by own current structures of spin valves and magnetic tunnel junctions with hysteretic current dependences of resistance. In the offered message the attention to discrepancy to physical principles of a hysteresis of resistance represented in publications is paid. It is schematically presented how the dependences of resistance on current should look not contradicting the energy conservation law for hysteresis dependence of resistance on current and corresponding volt-ampere characteristic.