Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in BiS2-based compounds LnO(0.5)F(0.5)BiS2 (Ln = La, Ce, Pr, Nd)
C. T. Wolowiec, B. D. White, I. Jeon, D. Yazici, K. Huang, and M. B., Maple

TL;DR
This study investigates how applying pressure enhances superconductivity in BiS2-based compounds, revealing a transition from low to high Tc phases near a semiconductor-metal transition point.
Contribution
It demonstrates the pressure-induced enhancement of Tc in LnO0.5F0.5BiS2 compounds and correlates the transition with semiconductor-metal behavior and lanthanide size.
Findings
Tc increases from ~3.5-3.9 K to over 7 K under pressure.
The transition occurs within ~0.3 GPa, indicating a sharp phase change.
The transition pressure correlates with the suppression of semiconducting behavior.
Abstract
Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivity with critical temperatures Tc of 3.5 and3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a low Tc superconducting phase to a high Tc superconducting phase in which Tc reaches maximum values of 7.6 and 6.4 K for PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2, respectively. The pressure-induced transition is characterized by a rapid increase in Tc within a small range in pressure of ~0.3 GPa for both compounds. In the normal state of PrO0.5F0.5BiS2, the transition pressure Pt correlates with the pressure where the suppression of semiconducting behaviour saturates. In the normal state of…
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