Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

TL;DR

This paper presents a model for how temperature and excitation influence the efficiency of InGaN LEDs, accounting for bandstructure changes and quantum effects to explain experimental observations.

Contribution

It introduces a comprehensive model combining bandstructure calculations and population dynamics to analyze efficiency variations with temperature and excitation in InGaN LEDs.

Findings

Efficiency shape changes with temperature and current density.

Quantum-well and barrier emissions interplay affects efficiency.

Model aligns with experimental observations.

Abstract

The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.