The exact solution of the diffusion trapping model of defect profiling with variable energy positrons

TL;DR

This paper presents an exact analytical solution to the positron diffusion trapping model, enabling precise defect profiling analysis from experimental data, surpassing previous numerical approaches.

Contribution

It provides explicit analytical solutions for the diffusion trapping model with realistic defect profiles, improving accuracy over prior numerical methods.

Findings

Analytical solutions match numerical VEPFIT results

Solutions agree with experimental defect profiling data

Method allows for more precise defect analysis

Abstract

We report an exact analytical solution of so-called positron diffusion trapping model. This model have been widely used for the treatment of the experimental data for defect profiling of the adjoin surface layer using the variable energy positron (VEP) beam technique. Hovewer, up to now this model could be treated only numerically with so-called VEPFIT program. The explicit form of the solutions is obtained for the realistic cases when defect profile is described by a discreet step-like function and continuous exponential-like function. Our solutions allow to derive the analytical expressions for typical positron annihilation characteristics including the positron lifetime spectrum. Latter quantity could be measured using the pulsed, slow positron beam. Our analytical results are in good coincidence with both the VEPFIT numerics and experimental data. The presented solutions are easily generalizable for defect profiles of other shapes and can be well used for much more precise treatment of above experimental data.