Diagnosing transient ionization in dynamic events
J.G. Doyle, A. Giunta, M.S. Madjarska, H. Summers, M. O'Mullane, A., Singh

TL;DR
This paper proposes a diagnostic line ratio using Si IV and O IV lines to identify transient ionization in solar plasma, based on detailed atomic data calculations and modeling of dynamic events.
Contribution
It introduces a new diagnostic method using the Si IV/O IV line ratio to detect transient ionization in the solar transition region.
Findings
The Si IV line can be enhanced by a factor of 2-4 during transient events.
The O IV line does not show significant enhancement during transients.
The line ratio can vary by a factor of four within seconds due to transient ionization.
Abstract
The present study aims to provide a diagnostic line ratio that will enable the observer to determine whether a plasma is in a state of transient ionization. We use the Atomic Data and Analysis Structure (ADAS) to calculate line contribution functions for two lines, Si IV 1394 A and O IV 1401 A, formed in the solar transition region. The generalized collisional-radiative theory is used. It includes all radiative and electron collisional processes, except for photon-induced processes. State-resolved direct ionization and recombination to and from the next ionization stage are also taken into account. For dynamic bursts with a decay time of a few seconds, the Si IV 1394 A line can be enhanced by a factor of 2-4 in the first fraction of a second with the peak in the line contribution function occurring initially at a higher electron temperature due to transient ionization compared to…
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