Electronic transport through molecular transistors in the polaronic regime

TL;DR

This paper introduces a new theoretical approach for analyzing non-equilibrium electronic transport in molecular transistors with strong electron-phonon interactions, demonstrating good agreement with existing methods and initial noise analysis.

Contribution

A novel resummation-based theoretical method for non-equilibrium transport in strongly coupled electron-phonon systems is proposed and validated against established techniques.

Findings

Good agreement with existing methods in known parameter ranges

Relatively accurate results compared to path-integral Monte Carlo

Preliminary current noise results presented

Abstract

In this work, a new theoretical approach to study the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. The proposed approach consists in a resummation of the dominant Feynman diagrams from the exact preturbative expansion. This scheme is compared with methods that can be found in the literature. It shows a good agreement with these methods in the range where they are known to provide good results, for a wide range of parameters. Also, it is compared with path-integral Monte Carlo calculations giving a relatively good agreement for polaronic and non polaronic regimes. Some preliminary results for the current noise obtained with our method are presented.