Synthesis of Self-assembled Iron Silicon Oxide Nanowires onto Single-crystalline Si(100)

TL;DR

This paper reports the synthesis of iron silicon oxide nanowires on single-crystalline Si(100) wafers using a chemical process involving ammonium iron sulfate, hydrogen peroxide, and triethylamine, with detailed characterization and proposed formation mechanism.

Contribution

It introduces a novel method for synthesizing self-assembled iron silicon oxide nanowires directly onto Si(100) wafers and explores their formation mechanism.

Findings

Nanowires with diameters of about 10nm and 75nm were synthesized.

Self-assembly of nanowires was observed and characterized.

A possible formation mechanism was proposed based on experimental evidence.

Abstract

Iron silicon oxide nanowire has been synthesized by putting single crystalline Si(100) wafer into ammonium iron sulfate, hydrogen peroxide, and triethylamine solution heated to from 70 to 100 degree in the air. The prepared iron silicon oxide nanowires with diameters of about 10nm (onto non etched Si(100) wafer) and about 75nm(onto etched Si(100) wafer) and their self assembles were characterized. The possible mechanism that accounted for the formation of iron silicon oxide nanowire is suggested based on experimental evidence.