Field-effect transistors made of individual colloidal PbS nanosheets

TL;DR

This paper demonstrates the fabrication of high-performance field-effect transistors using individual colloidal PbS nanosheets, offering a scalable and cost-effective alternative to traditional methods for 2D material device production.

Contribution

It introduces a novel colloidal chemistry approach to create ultra-thin PbS nanosheet transistors with competitive performance.

Findings

Devices exhibit p-type behavior and temperature-dependent photoconductivity.

Trap states significantly influence conduction mechanisms.

Performance rivals the best colloidal nanostructure-based transistors.

Abstract

Two-dimensional materials are considered for future quantum devices and are usually produced by extensive methods like molecular beam epitaxy. We report on the fabrication of field-effect transistors using individual ultra-thin lead sulfide nanostructures with lateral dimensions in the micrometer range and a height of a few nanometers as conductive channel produced by a comparatively fast, inexpensive, and scalable colloidal chemistry approach. Contacted with gold electrodes, such devices exhibit p-type behavior and temperature-dependent photoconductivity. Trap states play a crucial role in the conduction mechanism. The performance of the transistors is among the ones of the best devices based on colloidal nanostructures.