SiGe quantum dots for fast hole spin Rabi oscillations

TL;DR

This paper demonstrates that hole spins in SiGe quantum dots can be rapidly manipulated using electric fields, with potential Rabi frequencies around 100MHz, highlighting their suitability for quantum information processing.

Contribution

It provides experimental measurements of hole g-factors in SiGe quantum dots and shows how small gate voltage changes enable fast spin control via g-tensor modulation.

Findings

Hole g-factors are sensitive to gate voltage modulation.

Electrical manipulation of hole spins can reach ~100MHz Rabi frequency.

Potential for efficient spin control in hole-based quantum devices.

Abstract

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.