Negative differential resistance with graphene channels, interfacing distributed quantum dots in Field-Effect Transistors

TL;DR

This paper investigates graphene-based field-effect transistors with quantum dots embedded in a nano-structured array, demonstrating negative differential resistance which could enable advanced high-speed electro-photonic devices.

Contribution

It introduces a novel graphene FET design with distributed quantum dots that exhibits NDR, opening new possibilities for high-speed device applications.

Findings

Observed differential optical and electrical conductance

Demonstrated negative differential resistance in the device

Potential for new electro-photonic device development

Abstract

Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array; each filled hole was occupied by one dot. Differential optical and electrical conductance was observed. Since Negative Differential Resistance (NDR) is key to high-speed elements, such construction may open the door for new electro-photonic devices.