Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

TL;DR

This paper presents numerical simulation results of electron and positron channeling and emission spectra in various silicon crystal geometries, using a new computational module for projectile trajectory analysis.

Contribution

It introduces a new module in the MBN Explorer package for simulating particle channeling in different crystal configurations.

Findings

Channeling behavior varies with crystal bending and plane orientation.

Emission spectra depend on projectile energy and crystal geometry.

Simulations provide insights into particle trajectories in silicon crystals.

Abstract

Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.