Simulations of electron channeling in bent silicon crystal

TL;DR

This paper presents theoretical simulations of ultra-relativistic electron channeling in bent silicon crystals, using a new computational tool to analyze trajectories and interactions at energies between 195 and 855 MeV.

Contribution

The study introduces a novel simulation approach with the MBN Explorer package for modeling electron channeling in bent silicon crystals.

Findings

Electron channeling behavior varies with crystal curvature.

Simulations cover a wide energy range of 195-855 MeV.

The new method accurately predicts electron trajectories.

Abstract

We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package [2,3], which simulates classical trajectories of in a crystalline medium by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. A Monte Carlo approach is employed to sample the incoming electrons and to account for thermal vibrations of the crystal atoms. The electron channeling along Si(110) crystallographic planes are studied for the projectile energies 195--855 MeV and different curvatures of the bent crystal.