Chemical Diffusion at Mixed Ionic Electronic Semiconductor Interfaces and comparison with La2NiO4+d epitaxial thin films

TL;DR

This paper presents a semiconductor physics-based model for mixed ionic-electronic conductors, explaining defect equilibrium, charge transport, and interface effects, with validation against experimental data on La2NiO4+d thin films.

Contribution

It introduces a simple, standard semiconductor physics model for MIEC interfaces, providing insights into defect behavior, charge transport, and diffusion phenomena, validated by experimental measurements.

Findings

Qualitative agreement with electrical conductivity relaxation data

Insights into space charge layer formation in oxide heterostructures

Implications for high-temperature oxygen exchange processes

Abstract

A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials simultaneously conducting electronic and ionic point defects and to explore how rectifying effects on the electronic or ionic currents may affect the chemical diffusion and voltage at the interfaces under polarization. We found qualitatively good agreement with experimental measurements of the electrical conductivity relaxation of La2NiO4+d thin films epitaxially grown on NdGaO3 (110) substrates when the possible oxygen exchange between film and substrate is taken into account. We discuss the implications of this model to understand space charge layer formation and chemical diffusion on oxide thin film heterostructures when exposed to high temperatures and different oxygen partial pressures.