Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200K

TL;DR

This paper reports the synthesis of a p-type oxide diluted magnetic semiconductor La1-xSrxCu0.925Mn0.075SO with a Curie temperature around 200K, making it promising for high-temperature spintronic applications.

Contribution

It introduces a new bulk oxide DMS system with high Curie temperature and p-type conduction, advancing the development of spintronic materials.

Findings

Curie temperature around 200K for x>0.05

High-quality synthesis of La1-xSrxCu0.925Mn0.075SO

First demonstration of p-type oxide DMS with high TC

Abstract

Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (TC) is around 200K as x>0.05, which is among the highest TC record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.